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ITS » Research Report » Fisika
Posted by dwi at 18/03/2008 16:32:00  •  10066 Views


PEMBENTUKAN LAPISAN TIPIS OKSIDA LOGAM PADA PARTIKEL SIC UNTUK MENINGKATKAN KOMPAKTIBILITAS IKATAN KOMPOSIT ISOTROPIK AL-SIC

Author :
Mohamad Zainuri, Darminto, Triwikantoro 




ABSTRAK

Penelitian ini bertujuan untuk membentuk lapisan tipis oksida logam pada partikel SiC dengan metode elektrolisa lemah. Larutan ionic dibuat dengan cara melarutkan unsur Al Cu Mg dan ALMg pada larutan asam HNO3 dalam lingkungan atmosfir. Partikel SiC dimasukkan dalam larutan dan dilanjutkan dengan proses kalsinasi pada temperatur 200C dan 400C dengan waktu tahan 2 jam. Berdasarkan pengamatan fasa-fasa lapisan tipis yang terbentuk tergantung pada konsentrasi larutan elektrolisa temperatur dan waktu kalsinasi. Pengamatan mikrostruktur pada lapisan tipis dengan menggunakan Scanning Electron Microscope SEM dan kristalografinya dengan menggunakan X-Ray Diffraction XRD menunjukkan bahwa penambahan konsentrasi larutan ion Cu Al Mg dan AlMg menyebabkan peningkatan ketebalan lapisan oksida pada permukaan particle SiC. Pada larutan ion Al yang lebih tinggi dapat menimbulkan fasa oksida - Al2O3 yang bersifat inert dan terbentuk Alumina karbida yang bersifat destruktif. Pada larutan ion AlMg dapat menimbulkan fasa spinel pada permukaan partikel SiC yang mempunyai sifat kebasahan yang tinggi. Hasil kompaktibilitas untuk ketiga lautan ion Al Cu Mg yang dipakai sebagai lapisan tipis oksida pada partikei SiC yang digunakan sebagai penguat komposit AlSiC menunjukkan lapisan CuO mempunyai kualitas ikatan yang paling baik dibanding Al2O3 atau MgO. Hasil tersebut berdasarkan nilai densitas sintering dan pengujian upper dan lower bound.


ABSTRACT

The aim of this research is to create a thin film of metal oxide on the surface of SiC particles by electro less coating method. On the atmospheric ambient Al Cu Mg and AlMg were saluted in HNO3 acid to make ionic solution. SiC particles were immersed in electrolyte solution and the calcinations process was conduct at temperature 200C and 400C with holding time during 2 hours. Base on the investigation of experimental research the new phase as thin film was occur on the surface of SiC particles. The type of new phase and the thickness depend on liquid concentration temperature and holding time of calcinations. Microstructure of thin film on the SiC particle was analyzed by Scanning Electro Microscope SEM and X-Ray Diffraction. The result was shown the increasing of ionic solution of Al Cu Mg and AlMg equal with increasing of thickness of thin film on the surface of SiC particles. The high concentration of Al Ionic solution was create inert phase like -Al2O3 and Alumina carbide. Alumina carbide was destructive bounding between particles. Spinal phase on the surface of SiC particle was occur by immersing SiC in ionic solution of AlMg. This phase was increase compatibility between particles and has highest wet ability. The result of compression test on AlSiC composite with all of the kind coating oxide on surface of SiC particle was shown CuO coating have highest quality bounding between particle than the other coating. The quantitative value of compatibility bounding was base on sinter density and upper-lower bound.



KeywordsPartikel SiC ; Komposit isotropik AlSiC
 
Subject:  Teknologi lapisan tipis
Date Create: 18/03/2008
Type: Text
Format: pdf ; 89 pages
Language: Indonesian
Identifier: ITS-Research-3100007069440
Collection ID: 3100007069440
Call Number: ITS 530.427 5 Zai p


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