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ITS » Research Report » Fisika
Posted by dwi at 27/08/2007 10:49:00  •  9136 Views


Author :
Eddy Yahya, Agung Budiono, Zulkifli 




ABSTRAK

Lapisan tipis a-Si H intrinsik tipe-n dan tipe-p dibuat dengan Multi-Chamber PECVD System. Temperatur deposisi untuk a-Si H intrinsik tipe-n dan tipe-p berturut-turut adalah Ts 275C 270C dan 275C sedangkan tekanan deposisi Ps 530 mTorr 530 mTorr dan 480 mTorr dan daya R.F 18 Watt 20 Watt dan 15 Watt. Lapisan a-Si H intrinsik mempunyai d 965 x 10-11Scm-1 dan ph 224 x 10-5 Scm-1 sementara a-Si H tipe-n d 306 x 10-2 Scm-1 dan ph 326 x 10-2 Scm-1 dan a-Si H tipe-p d 465 x 10-3 Scm-1 ph 570 x 10-5 Scm-1. Energi aktivasi a-Si H intrinsik tipe-n dan tipe-p berturut-turut adalah Ea 084 eV Ea 043 eV dan Ea 0 45 eV. Energi gap-optik lapisan a-Si H intrinsik adalah Eg opt 178 eV.


ABSTRACT

Thin films intrinsic a-Si H type-n and type-p were made by Multi-Chamber PECVD System. Temperatures deposition of a-Si H intrinsic type-n and type-p respectively are Ts 275C 270C and 275C. While pressure depositions are Ps 530 mTorr 530 mTorr and 480 mTorr with R.F powers are 18 Watts 20 Watts and 15 Watts. Thin film intrinsic a-Si H has d 965 x 10-11Scm-1 and ph 224 x 10-5 Scm-1 while type a-Si H type-n d 306 x 10-2 Scm-1 and ph 326 x 10-2 Scm-1 and a-Si H type-p d 465 x 10-3 Scm-1 ph 570 x 10-5 Scm-1. Activation energy of intrinsic type-n and type-p a-Si H respectively are Ea 084 eV Ea 043 eV and Ea 0 45 eV. Optical energy gap of intrinsic a-Si His Eg opt 178 eV



Keywordssel surya ; fisika plasma
 
Subject:  Tenaga matahari
Date Create: 27/08/2007
Type: Text
Format: pdf ; 51 pages
Language: Indonesian
Identifier: ITS-Research-3100007070968
Collection ID: 3100007070968
Call Number: ITS 621.312 44 Yah p


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